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GaSb Gallium Antimonide Crystal Substrates

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WA0504
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GaSb Gallium Antimonide Crystal Substrates

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Main Parameters of GaSb crystal substrates and wafers
Single crystal
Dopant
Conductivity type
Carrier concentration
cm-3
Mobility(cm2/V.s)
Dislocation density(cm-2)
GaSb
undoped,
intrinsic
P
(1-2)*10^17
600-700
GaSb
Zn
P
(5-100)*10^17
200-500
GaSb
Te
N
(1-20)*10^17
2000-3500
dimension (mm)
Diameter 50.8x0.5mm, 10x10x0.5mm
Surface roughness
Surface roughness (Ra):
Polishing
Single side or double side polished

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