NANO PRO™ 4 Inch MgO Doped Lithium Niobate Thin Film on Insulator Wafers (MGLNOI), X-Cut
NANOSSR offers MgO Doped Lithium Niobate (LiNbO3) Thin Film (MGLNOI) on Insulator wafer. LNOI wafer consists of an insulating substrate with lithium niobate layer deposited on it. Lithium niobate is a versatile material with high nonlinearities and unique optical and electro-optical properties, which is widely used in photonics related applications, including modulators and many other optical communication devices. Magnesium oxide (MgO) doping improves the material properties by reducing the coercive field (Ec) required for poling from 21 to 4 V/µm, as well as the sensitivity to green-induced infrared absorption (GRIIRA) and photorefractive damage. The insulating substrate provides a stable platform and reduces surface recombination, which makes it a better material than bulk lithium niobate in many ways, including smaller size and footprint (suitable for integration of miniaturized electronic devices), lower propagation loss (more efficient), higher mechanical stability and resistance to environment, etc. It is now investigated as a promising material for the development of next-generation electronic and photonic devices.
Applications:
- Non-linear Optics
- Electro–optics Modulators
- Ferroelectric Memory Devices
- Others
Specification:
| General Wafer | |
| Structure | MgO-LiNbO3/ Oxide / Si |
| Diameter | Φ100 ± 0.2 mm |
| Thickness | 525 ± 25 μm |
| Primary Flat Length | 32.5 ± 2 mm |
| Wafer Beveling | R Type |
| TTV | μm |
| LTV | 2) / 100% |
| Bow | ± 50 μm |
| Warp | μm |
| Edge Trimming | 2 ± 0.5 mm |
| Lithium Niobate Layer | |
| Average Thickness |
300 nm (WA4011) Other thicknesses are available upon request |
| Orientation | X axis ± 0.5° |
| Primary Flat Orientation | Z axis ± 1° |
| Doping | MgO (5mol%) |
| Front Surface Roughness (Ra) | |
| Bond Defects | > 1 mm None ; ≦ 1 mm within 80 total |
| Front Surface Scratch |
> 1 cm None ; ≦ 1 cm within 3 total |
| Oxide Layer | |
| Thickness | 4700 ± 150 nm |
| Uniformity | ± 5% |
| Substrate | |
| Material | Si |
| Orientation | ± 1° |
| Primary Flat Orientation | ± 1° |
| Resistivity | > 10 kΩ·cm |
| Backside | Etched-Oxide |
Please contact us for bulk order or customized shape, size, thickness and substrate.
References:
1. Integrated photonics on thin-film lithium niobate. Advances in Optics and Photonics, 13(2), 242-352.
4. Ultrafast tunable lasers using lithium niobate integrated photonics. Nature, 615(7952), 411-417.
