AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire substrate
Other layer structures can be custom made upon request. Please contact us for a quote.
- Product SKU# WA0230 for SSP, WA0231 for DSP
- Substrate: C plane Sapphire (0001), 2 inch diameter sapphire wafer, 430 +/- 25 um thickness
- Thickness of GaN buffer (um): 2 um
- AlGaN thickness (nm): 25 nm
- AlN thickness: 1 nm
- GaN layer thickness: 300 nm
- Sheet resistance (ohms/sq):
- Electron mobility (cm2/V-sec): >1500
- Carrier concentration (/cm): >8e12
- Usable Area: >90%
- Growth method: MOCVD
