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NANO PRO Yttria Stabilized Zirconia (YSZ) Single Crystal Substrates

SKU:
SU1505
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NANO PRO Yttria Stabilized Zirconia (YSZ) Single Crystal Substrates

Piece 1
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Global Head Office

Email: Marknanossr@gmail.com

Tel：+86 15606950920

Wechat: 15606950920

Address:  Building 1, No. 39 Xinchang Road, Haicang District, Xiamen City, Fujian Province, China

YSZ is widely used as an oxide crystal substrate for the epitaxial growth of thin films. Both standard and custom-made products are available from NANOSSR. Please contact us to request special sizes.

Main Parameters of YSZ crystal substrates
Material 8 mol.% Y2O3 stabilized ZrO2, YSZ (yttria-stabilized zirconia), 8YSZ
Crystal structure
Face Centered Cubic (FCC), CaF2 type fluorite
Unit cell constant
a = 5.125 A
Melt point (degree C)
2500
Density (g/cm3)
5.9
Hardness
8 - 8.5 Mohs
Thermal expansion (/K)
10.3 x 10-6
Dielectric constant (@ 1MHz)
27
Tangent loss 0.0054
Growth method
Skull melting, cold crucible method
Sizes
5x5, 10x5, 10x10, 25.4x25.4, 50.8x50.8 mm
1 inch diameter, 2 inch diameter, 3 inch diameter, other sizes are available upon request
Thickness
0.5 mm or 1.0 mm or customized
Surface polishing
Single or double side polished (epi-ready CMP)
Crystal orientation
(100), (110), (111), +/- 0.5 degree
Surface roughness, Ra:
Package
sealed in class 100 clean bags 

 

References:

Growth of Zirconia Crystals by Skull Melting Technique (Chapter 21 in Crystal Growth Technology)
E. E. Lomonova V. V. Osiko
Book Editor(s): Hans J. Scheel Tsuguo Fukuda
First published: 23 September 2003

Highly electrically conductive indiumtinoxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition
Appl. Phys. Lett. 76, 2740 (2000), https://doi.org/10.1063/1.126461
Hiromichi Ohta, Masahiro Orita, and Masahiro Hirano

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